Material Etching and Etch Rates

by  on  in SCIENCE

fourtysix

Here’s a partial list of materials and their etch rates!

 

 

Isotropic Etch Mode Rate (Å/Min) Selectivity (:1) Anisotropic Etch Mode Rate (Å/Min) Selectivity (:1)
Silicon Nitrate (Si3N4) SF6/O2 RIE/PE >1000 2-3, Resist CHF2/O2 DRIE 400+ 2-3, Resist
>7, SiO2 >10, GaAs
>20, GaAs, Al >10, Ti, W, Al
1, Si
Silicon Dioxide (SiO2) BHF 100 CHF2/O2 DRIE 300-400 2-3, Resist
>10, GaAs
>10, Ti, W, Al
Phosphosilicate glass HF Chemical 15000 inf, Resist
inf, Polysilicon
2, Al
0.5, Ti
inf, GaAs
Polysilicon KOH, EDP, TMAH Chemical 10000 2-3, Resist, Al
25, PSG
inf, W
P-Doped Silicon Stop KOH 23 600, Undoped Silicon
EDP 1000, Undoped Silicon
P-Doped Silicon Cl2/HBr RIE 4000
Polyimide
Aluminum Acid (H3PO4, HNO3, HAC,H2O, 16:1:1:2) Chemical 6600 inf, Resist Cl2/HBr RIE
600, PSG, Polysilicon
Tungsten H2O2 Chemical 190 100, Resist
10, Al
SiGe HF ES DRIE 1400
Silicon KOH Chemical 14000 2-3, Resist KOH 85C (100) Chemical 14000 400, (111)
1.5, Polysilicon XeF2 RIE 4600 inf, resist
2, Polysilicon
30, PSG CL2/HBr
HNO3, H2O, NH4F Chemical 1500 inf, resist
1.5, Polysilicon
0.25, PSG, Al
0.5, Ti
HNA (10,30,8) Chemical 30000 100, SiO2
HNA (25,50,25) Chemical 40000 133, Si3N4
HNA (9, 75, 30) Chemical 70000 100, SiO2
GaAs Cl2/HBr RIE
Quartz NH4F HF Chemical 1600 inf, metal